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OBTS149 Datasheet

Smart Lowside Power Switch

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OBTS149 pdf
HITFET®BTS 149
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Thermal Shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Status feedback with external input resistor
Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
18 m
30 A
19 A
6000 mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
V bb
+
LOAD
1
IN
dv/dt
limitation
Current
lim itation
Overvoltage
protection
Drain
2
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
HITFET®
3
Semiconductor Group
Page 1
M
13.07.1998
Siemens Semiconductor Group
Siemens Semiconductor Group



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