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NST3906F3T5G Datasheet

PNP General Purpose Transistor

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NST3906F3T5G
PNP General Purpose
Transistor
The NST3906F3T5G device is a spinoff of our popular
SOT23/SOT323/SOT563/SOT963 threeleaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT1123 surface mount package. This device is ideal for
lowpower surface mount applications where board space is at a
premium.
Features
hFE, 100300
Low VCE(sat), 0.4 V
Reduces Board Space
This is a PbFree Device
MAXIMUM RATINGS
Rating
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
40
40
5.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
PD
(Note 1)
Max
290
2.3
Unit
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD 347 mW
(Note 2) 2.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
JunctiontoLead 3
RYJL
(Note 2)
143
°C/W
Junction and Storage Temperature Range TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
NST3906F3T5G
3
12
SOT1123
CASE 524AA
STYLE 1
MARKING DIAGRAM
3M
3 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
NST3906F3T5G
SOT1123 8000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 1
1
Publication Order Number:
NST3906F3/D
ON Semiconductor
ON Semiconductor



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