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N04L163WC1A Datasheet

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit

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NanoAmp Solutions, Inc.
N04L163WC1A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
The N04L163WC1A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L163WC1A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
Part Number
Package Type
Current (ISB), Current (Icc),
48 - BGA
44 - TSOP II
N04L163WC1AB1 48 - BGA Pb-Free -40oC to +85oC 2.3V - 3.6V 70ns@ 2.7V
4 µA
2 mA @ 1MHz
N04L163WC1AT2 44 - TSOP II Green
(DOC# 14-02-018 REV I ECN# 01-1001)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
NanoAmp Solutions
NanoAmp Solutions

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