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N0412N Datasheet

N-CHANNEL MOSFET

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N0412N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0554EJ0100
Rev.1.00
Nov 07, 2011
Description
The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
Low input capacitance
Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V)
High current
ID(DC) = ±100 A
RoHS Compliant
Ordering Information
Part No.
N0412N-S19-AY 1
Lead Plating
Pure Sn (Tin)
Packing
Tube
50 p/tube
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-220
1.9 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
40
±20
±100
±400
119
1.5
150
55 to +150
55
300
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
1.05
83.3
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 0 V, L = 100 μH
R07DS0554EJ0100 Rev.1.00
Nov 07, 2011
Page 1 of 6
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