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N02L63W2A Datasheet

2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

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2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16 bit
Features
Overview
The N02L63W2A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N02L63W2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
N02L63W2AB
N02L63W2AT
N02L63W2AB2
N02L63W2AT2
Package Type
48 - BGA
44 - TSOP II
48 - BGA Green
44 - TSOP II Green
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby Operating
Current Current (Icc),
(ISB), Typical Typical
-40oC to +85oC
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 9
Publication Order Number:
N02L63W2A/D
ON Semiconductor
ON Semiconductor



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