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MSB92T1G Datasheet

PNP Silicon General Purpose High Voltage Transistor

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MSB92T1G pdf
MSB92T1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC59 package
which is designed for low power surface mount applications.
Features
This is a PbFree Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
300
300
5.0
150
Vdc
Vdc
Vdc
mAdc
Rating
Symbol
Max Unit
Power Dissipation (Note 1)
PD 150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg 55X+ 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
SC59
CASE 318D
STYLE 1
J2D MG
G
J2D= Device Marking Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MSB92T1G
SC59
(PbFree)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 1
1
Publication Order Number:
MSB92T1G/D
ON Semiconductor
ON Semiconductor



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