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MSB92ASWT1G Datasheet

PNP Silicon General Purpose High Voltage Transistor

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MSB92ASWT1G pdf
MSB92ASWT1G,
MSB92AS1WT1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Electrostatic Discharge
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
ESD
300
300
5.0
500
HBMu16,000,
MMu2,000
Vdc
Vdc
Vdc
mAdc
V
THERMAL CHARACTERISTICS
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD
150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC70 (SOT323)
CASE 419
STYLE 3
MARKING DIAGRAM
D3 M G
G
D5 M G
G
1
MSB92ASWT1G
1
MSB92AS1WT1G
Dx = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MSB92ASWT1G SC70 3000/Tape & Reel
(PbFree)
MSB92AS1WT1G SC70 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
September, 2010 Rev. 3
1
Publication Order Number:
MSB92ASWT1/D
ON Semiconductor
ON Semiconductor



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