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MSB92ASWT1 Datasheet

PNP Silicon General Purpose High Voltage Transistor

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MSB92ASWT1 pdf
MSB92ASWT1
Preferred Device
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Electrostatic Discharge
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
ESD
Value
-300
-300
-5.0
500
MBMu16,000,
MMu2,000
Unit
Vdc
Vdc
Vdc
mAdc
V
THERMAL CHARACTERISTICS
Rating
Symbol Max Unit
Power Dissipation (Note 1.)
PD
150 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
- 55 ~ + 150
°C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC-70/SOT-323
CASE 419
STYLE 3
MARKING DIAGRAM
D3 M
D3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
MSB92ASWT1 SC-70/
SOT-323
Shipping
8mm Tape & Reel
(7-inch/3000 Unit)
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
May, 2003 - Rev. 0
1
Publication Order Number:
MSB92ASWT1/D
ON Semiconductor
ON Semiconductor



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