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MMBT2222AM3T5G Datasheet

NPN General Purpose Transistor

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MMBT2222AM3T5G
NPN General Purpose
Transistor
The MMBT2222AM3T5G device is a spinoff of our popular
SOT23 threeleaded device. It is designed for general purpose
amplifier applications and is housed in the SOT723 surface mount
package. This device is ideal for lowpower surface mount
applications where board space is at a premium.
Features
Reduces Board Space
This is a HalideFree Device
This is a PbFree Device
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
75 Vdc
6.0 Vdc
600 mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation
FR5 Board (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctiontoAmbient
PD
RqJA
mW
265
mW/°C
2.1
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD 640 mW
5.1 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
195 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
AA
M
MARKING
DIAGRAM
SOT723
CASE 631AA
STYLE 1
AA M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT2222AM3T5G SOT723 8000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 Rev. 1
1
Publication Order Number:
MMBT2222AM3/D
ON Semiconductor
ON Semiconductor



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