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MJE13005D Datasheet

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MJE13005D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
MJE13005D
●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
FEATURES:■HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用:节能灯 电子镇流器 电子变压器 开关电源
APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-220/220S
参数
符号
额定值
单位
PARAMETER
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极-基极电压
Emitter- Base Voltage
集电极电流
Collector Current
集电极耗散功率
Total Power Dissipation
最高工作温度
Junction Temperature
贮存温度
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
VALUE
700
400
9
4.0
70
150
-65-150
UNIT
V
V
V
A
W
°C
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
CHARACTERISTICS
SYMBOL
集电极-基极截止电流
Collector-Base Cutoff Current
ICBO
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICEO
集电极-基极电压
Collector-Base Voltage
VCBO
集电极-发射极电压
Collector-Emitter Voltage
VCEO
发射极 -基极电压
Emitter- Base Voltage
VEBO
测试条件
TEST CONDITION
VCB=700V
VCE=400V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
最小值
MIN
700
400
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=1.0A,IB=0.2A
IC=4.0A,IB=1.0A
IC=1A,IB=0.2A
0.45
1.10
1.25
V
V
电流放大倍数
DC Current Gain
VCE=5V,IC=10mA
hFE VCE=5V,IC=1.0A
VCE=5V,IC=4A
7
10
5
40
贮存时间/Storage Time
下降时间/Falling Time
内置二极管正向压降
Diode Forward Voltage
tS VCC=5V,IC=0.5A, 2.0 3.5
tf (UI9600)
0.5
VF IF=2.0A
2.0
µs
V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 普通袋装/NORMAL PACKING
MJE13005D TO-220
MJE13005D TO-220-HF
TO-220S 普通袋装/NORMAL PACKING
MJE13005D TO-220S
MJE13005D TO-220S-HF
TO-220 条管装/TUBE PACKING
MJE13005D TO-220-TU
MJE13005D TO-220-TU-HF
1
Si semiconductors 2013.1
SI Semiconductors
SI Semiconductors



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