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MJE13003DT Datasheet

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MJE13003DT pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
MJE13003DT
●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
FEATURES:■HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用:节能灯 电子镇流器 电子变压器 开关电源
APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-251/251S
参数
符号
额定值
单位
PARAMETER
SYMBO
VALUE
UNIT
集电极-基极电压
Collector-Base Voltage
L
VCBO
700
V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400
V
发射极-基极电压
Emitter- Base Voltage
VEBO
9
V
集电极电流
Collector Current
IC 2 A
集电极耗散功率
Total Power Dissipation
Ptot
40 W
最高工作温度
Junction Temperature
Tj
150 °C
贮存温度
Storage Temperature
Tstg
-65-150
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
SYMBOL
ICBO
ICEO
VCBO
VCEO
VEBO
TEST CONDITION
VCB=700V
VCE=400V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=1.0A,IB=0.25A
IC=1.5A,IB=0.5A
IC=0.5A,IB=0.1A
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
hFE VCE=5V,IC=0.5A
VCE=5V,IC=2A
贮存时间/Storage Time
下降时间/Falling Time
内置二极管正向压降
Diode Forward Voltage
tS VCC=5V,IC=0.25A
tf (UI9600 )
VF IF=2A
●订单信息/ORDERING INFORMATION:
最小值
MIN
700
400
9
7
10
5
2.0
最大值
MAX
100
250
0.5
0.6
1.2
40
3.5
0.8
2.2
单位
UNIT
μA
μA
V
V
V
V
V
µs
V
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料
Normal Package Material
无卤塑封料
Halogen Free
TO-251 251S 普通袋装/NORMALPACKING MJE13003DT TO-251 251S MJE13003DT TO-251-HF 251S-HF
TO-251 251S 条管装/TUBE PACKING
MJE13003DT TO-251
251S-TU
MJE13003DT TO-251 251S-TU-HF
Si semiconductors 2014.10
1
SI Semiconductors
SI Semiconductors



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