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MJE13003D Datasheet

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MJE13003D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
MJE13003D
●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
FEATURES:■HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用:节能灯 电子镇流器 电子变压器 开关电源
APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-126/ 126S / 220/ 220S
参数
符号
额定值
单位
PARAMETER
SYMBOL
VALUE
UNIT
集电极-基极电压
Collector-Base Voltage
VCBO
700 V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400 V
发射极-基极电压
Emitter- Base Voltage
VEBO
9V
集电极电流
Collector Current
IC
2A
集电极耗散功率
Total Power Dissipation
最高工作温度
Junction Temperature
TO-126/126S:40
Ptot
TO-220/220S:50
W
Tj 150 °C
贮存温度
Storage Temperature
Tstg
-65-150
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
SYMBOL
ICBO
ICEO
VCBO
VCEO
VEBO
TEST CONDITION
VCB=700V
VCE=400V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=1.0A,IB=0.25A
IC=1.5A,IB=0.5A
IC=0.5A,IB=0.1A
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
hFE VCE=5V,IC=0.5A
VCE=5V,IC=2A
贮存时间/Storage Time
下降时间/Falling Time
tS VCC=5V,IC=0.25A
tf (UI9600 )
内置二极管正向压降
Diode Forward Voltage
VF
IF=2A
●订单信息/ORDERING INFORMATION:
最小值
MIN
700
400
9
7
10
5
2.0
最大值
MAX
100
250
0.5
0.6
1.2
40
3.5
0.8
2.2
单位
UNIT
μA
μA
V
V
V
V
V
µs
V
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-126 普通袋装/NORMAL PACKING
MJE13003D TO-126
MJE13003D TO-126-HF
TO-126S 普通袋装/NORMAL PACKING
MJE13003D TO-126S
MJE13003D TO-126S-HF
TO-220 普通袋装/NORMAL PACKING
MJE13003D TO-220
MJE13003D TO-220-HF
TO-220S 普通袋装/NORMAL PACKING
MJE13003D TO-220S
MJE13003D TO-220S-HF
TO-220 条管装/TUBE PACKING
MJE13003D TO-220-TU
MJE13003D TO-220-TU-HF
Si semiconductors 2013.12
1
SI Semiconductors
SI Semiconductors



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