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MBRS260T3G Datasheet

Surface Mount Schottky Power Rectifier

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MBRS260T3G pdf
MBRS260T3G,
NRVBS260T3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metaltosilicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
Compact Package with JBend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
GuardRing for OverVoltage Protection
Low Forward Voltage Drop
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These are PbFree Devices
Mechanical Characteristics
Case: Molded Epoxy
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings:
Machine Model = C
Human Body Model = 3B
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 60 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B26G
G
B26 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBRS260T3G
Package
SMB
(PbFree)
Shipping
2,500 /
Tape & Reel
NRVBS260T3G
SMB
(PbFree)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 7
1
Publication Order Number:
MBRS260T3/D
ON Semiconductor
ON Semiconductor



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