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MBRS130LT3 Datasheet

Schottky Power Rectifier

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MBRS130LT3
Schottky Power Rectifier
Surface Mount Power Package
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the
system.
Features
Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C)
Small Compact Surface Mountable Package with JBend Leads
Highly Stable Oxide Passivated Junction
GuardRing for Stress Protection
PbFree Package is Available
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 100 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
30 VOLTS
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
1BL3G
G
1BL3 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRS130LT3
SMB
2500/Tape & Reel
MBRS130LT3G
SMB
2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
May, 2009 Rev. 8
1
Publication Order Number:
MBRS130LT3/D
ON Semiconductor
ON Semiconductor



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