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KC817-25W Datasheet

NPN Silicon AF Transistors

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KC817-25W pdf
SMD Type
NPN Silicon AF Transistors
KC817W
www.DataSheet4U.com
Transistors
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj
Tstg
Rating
50
45
5
500
1
100
250
150
-65 to +150
Unit
V
V
V
mA
A
mA
mW
1 Emitter
2 Base
3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle
KC817-16W
KC817-25W
KC817-40W
2%
Symbol
Testconditons
VCBO IC = 10 A, IE = 0
VCEO IC = 10 mA, IB = 0
VEBO
ICBO
IE = 10 A, IC = 0
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150
IEBO VEB = 4 V, IC = 0
hFE IC = 100 mA, VCE = -1 V
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
CCb VCB = 10 V, f = 1 MHz
Ceb VEB = 0.5 V, f = 1 MHz
fT IC = 50 mA, VCE = 5 V, f = 100 MHz
Marking
NO.
Marking
KC817-16W
6A
KC817-25W
6B
KC817-40W
6C
Min Typ Max Unit
50 V
45 V
5V
100 nA
50 A
100 nA
100 160 250
160 250 400
250 350 630
0.7 V
1.2 V
6 pF
60 pF
170 MHz
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