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KC817-25 Datasheet

PNP Silicon AF Transistors

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KC817-25 pdf
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Transistors
NPN Silicon AF Transistors
KC817(BC817)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Rating
50
45
5
800
310
150
-65 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base emitter on voltage
Output Capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle
Marking
2%
NO.
Marking
hFE
KC817-16
8FA
100 250
KC817-25
8FB
160 400
Symbol
Testconditons
VCBO IC = 10 A,VBE = 0
VCEO IC = 10 mA, IB = 0
VEBO IE = 10 A, IC = 0
ICES VCB = 25 V, VBE= 0
IEBO VEB = 4 V, IC = 0
IC = 100 mA, VCE = 1 V
hFE
IC = 300 mA, VCE = 1 V
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(on) VCE=1V,IC=300mA
Cob VCB=10V,f=1MHz
fT IC = 10 mA, VCE = 5 V, f = 50 MHz
KC817-40
8FC
250 630
Min Typ Max Unit
50 V
45 V
5V
100 nA
100 nA
100 630
60
0.7 V
1.2 V
12 pF
100 MHz
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