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KC808A-16 Datasheet

PNP Silicon AF Transistors

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KC808A-16 pdf
SMD Type
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Transistors
PNP Silicon AF Transistors
KC808A(BC808A)
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
Total power dissipation
Storage temperature
Junction temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Rating
-30
-25
-5
-500
-1
-100
310
-65 to +150
150
Unit
V
V
V
mA
A
mA
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
KC808A-16
KC808A-25
Collector saturation voltage *
KC808A-40
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Testconditons
VCBO IC = -10 µA, IE = 0
VCEO IC = -10 mA, IB = 0
VEBO
ICBO
IE = -10 µA, IC = 0
VCB = -25 V, IE = 0
VCB = -25 V, IE = 0 , TA = 150
IEBO VEB = -4 V, IC = 0
hFE IC = -100 mA, VCE = -1 V
VCE(sat) IC = -500 mA, IB = -50 mA
VBE(sat) IC = -500 mA, IB = -50 mA
CCb VCB = -10 V, f = 1 MHz
Ceb VEB = -0.5 V, f = 1 MHz
fT IC = -50 mA, VCE = -5 V, f = 100 MHz
Marking
NO.
Marking
KC808A-16
5E
KC808A-25
5F
KC808A-40
5G
Min Typ Max Unit
-30 V
-25 V
-5 V
-100 nA
-50 A
-100 nA
100 160 250
160 250 400
250 350 630
-0.7 V
-1.2 V
10 pF
60 pF
200 MHz
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