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KC808-25 Datasheet

PNP Silicon AF Transistors

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KC808-25 pdf
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Transistors
PNP Silicon AF Transistors
KC808(BC808)
Features
High collector current.
High current gain.
Low collector-emitter saturation voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Rating
-30
-25
-5
-800
310
150
-65 to +150
Unit
V
V
V
mA
mW
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-to-baser breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base emitter on voltage
Output Capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle
2%
Marking
NO.
Marking
hFE
KC808-16
9GA
100 250
KC808-25
9GB
160 400
Symbol
Testconditons
VCBO IC = -10 A,VBE = 0
VCEO IC = -10 mA, IB = 0
VEBO IE = -10 A, IC = 0
ICES VCB = -25 V, VBE= 0
IEBO VEB = -4 V, IC = 0
IC = -100 mA, VCE = -1 V
hFE
IC = -300 mA, VCE = -1 V
VCE(sat) IC = -500 mA, IB = -50 mA
VBE(on) VCE=-1V,IC=300mA
Cob VCB=-10V,f=1MHz
fT IC = -10 mA, VCE = -5 V, f = 50 MHz
Min Typ Max Unit
-30 V
-25 V
-5 V
-100
-100
nA
nA
100 630
60
-0.7 V
-1.2 V
12 pF
100 MHz
KC808-40
9GC
250 630
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