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KC337 Datasheet

NPN Transistors

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KC337 pdf
DIP Type
NPN Transistors
BC337 (KC337)
Transistors
TO-92
4.58
+0.25
–0.15
Unit: mm
Features
Collector Current Capability IC=0.5A
Collector Emitter Voltage VCEO=45V
Complement to BC327.
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current - Pulse
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction Temperature
Storage Temperature Range
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
BC337
DC current gain
BC337-16
BC337-25
BC337-40
DC current gain
Collector output capacitance
Transition frequency
C
B
E
0.46 0.10
1 2 31.27TYP
1.27TYP
[1.27 0.20]
[1.27 0.20]
3.60 0.20
(R2.29)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IBP
PC
RθJA
TJ
Tstg
Rating
50
45
5
500
1
200
625
0.2
150
-65 to 150
Unit
V
mA
A
mA
mW
/mw
0.38
+0.10
–0.05
1. Emitter
2. Base
3. Collector
Symbol
Test Conditions
VCBO Ic= 100 μAIE= 0
VCEO Ic= 1 mAIB= 0
VEBO IE= 100μAIC= 0
ICBO
VCB= 50 V , IE= 0
VCB= 50 V , IE= 0 , TJ = 150
IEBO VEB= 5V , IC=0
VCE(sat) IC=500 mA, IB=50mA
VBE(sat) IC= 500 mA, IB= 50mA
VBE VCE= 1V, IC= 500mA
VCE= 1V, IC= 100mA
hFE
VCE= 1V, IC= 500mA
Cob VCB= 10V, IE=ie=0,f=1MHz
fT VCE= 5V, IC= 10mA,f=100MHz
Min Typ Max Unit
50
45 V
5
0.1
5 uA
0.1
0.7
1.2 V
1.2
100 600
100 250
160 400
250 600
40
5 pF
100 MHz
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