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K13A25D Datasheet

TK13A25D

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K13A25D pdf
MOSFETs Silicon N-Channel MOS (π-MOS)
TK13A25D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.19 (typ.)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK13A25D
TO-220SIS
1: Gate (G)
2: Drain (D)
3: Source (S)
1 2011-10-10
Rev.2.0
Toshiba Semiconductor
Toshiba Semiconductor



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