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2SK1398

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
5 DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1398
SST
FEATURES
Directly driven by ICs having a 3-V power supply.
Not necessary to consider driving current because of its high input impedance.
Possible to reduce the number of parts by omitting the bias resistor.
Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V)
VDSS
Gate to Source Voltage (VDS= 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Note PW 10 ms, Duty cycle 50 %
50
±7.0
±100
±200
250
150
–55 to +150
V
V
mA
mA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1991, 2000
NEC
NEC



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