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2SK1388

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2SK1388
F-III Series
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
N-channel MOS-FET
30V 0,022Ω 35A 60W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
www.DataSh-eetD4UC.c-DomC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
30
Continous Drain Current
I D 35
Pulsed Drain Current
I D(puls)
140
Continous Reverse Drain Current
I DR
35
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
P D 60
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
A
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=30V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±20V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=17,5A
VGS=4V
ID=17,5A
VGS=10V
Forward Transconductance
g fs
ID=17,5A
VDS=12V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=12V
t r ID=35A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Diode Forward On-Voltage
tf
V SD
RGS=25
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
30
1,0
8
Typ. Max.
1,5
10
0,2
10
0,025
0,016
17
1750
800
400
25
100
300
180
1,35
100
2,5
500
1,0
100
0,037
0,022
2630
1200
600
38
150
450
270
2,0
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
V
ns
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75 °C/W
2,08 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
Fuji Electric
Fuji Electric



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