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2SK1381

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2SK1381
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1381
Relay Drive, Motor Drive and DCDC Converter
Applications
Unit: mm
4 V gate drive
Low drainsource ON resistance : RDS (ON) = 25 m(typ.)
High forward transfer admittance : |Yfs| = 33 S (typ.)
www.DataSheet4U.cLoomw leakage current
Enhancementmode
: IDSS = 100 µA (max) (VDS = 100 V)
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
Thermal Characteristics
Characteristics
Symbol
100
100
±20
50
200
150
150
55~150
Max
V
V
V
A
W
°C
°C
Unit
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02
Toshiba Semiconductor
Toshiba Semiconductor



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