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K1358 Datasheet

2SK1358

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K1358 pdf
TOSHIBA
Discrete Semiconductors
Field Effect Transistor
Silicon N Channel MOS Type (π-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
www.DataShFeeeat4tUu.rceosm
• Low Drain-Source ON Resistance
- RDS(ON) = 1.1(Typ.)
• High Forward Transfer Admittance
- Yfs= 4.0S (Typ.)
• Low Leakage Current
- IDSS = 300µA (Max.) @ VDS = 720V
• Enhancement-Mode
- Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20k)
Gate-Source Voltage
Drain Current
DC
Pulse
Drain Power Dissipation
(Tc = 25°C)
Channel Temperature
Storage Temperature Range
VDSS
VDGR
VGSS
ID
IDP
PD
900
900
±30
9
27
150
Tch 150
Tstg -55 ~ 150
UNIT
V
V
V
A
W
°C
°C
Thermal Characteristics
CHARACTERISTIC
SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case
Thermal Resistance, Channel to Ambient
Rth(ch-c)
Rth(ch-a)
0.833
50
°C/W
°C/W
This transistor is an electrostatic sensitive device. Please handle with care.
2SK1358
Industrial Applications Unit in mm
TOSHIBA CORPORATION
1/6
Toshiba Semiconductor
Toshiba Semiconductor



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