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N-CHANNEL MOS TYPE TRANSISTOR

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2SK1310A
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1310A
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
z Output Power
: Po 190 W (Min.)
z Drain Efficiency
: ηD = 65% (Typ.)
z Frequency
: f = 230 MHz
z PushPull Structure Package
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDSS
VGSS
ID
IDR
PD
Tch
Tstg
100
±20
12
12
250
150
55~150
V
V
A
A
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
EIAJ
temperature, etc.) may cause this product to decrease in the
TOSHIBA
222C2A
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 17.5 g
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01
Toshiba Semiconductor
Toshiba Semiconductor



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