Home >> K117 Search >> Toshiba Semiconductor K117 Datasheet

K117 Datasheet

2SK117

No Preview Available !

K117 pdf
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
2SK117
Low Noise Audio Amplifier Applications
Unit: mm
High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
50
10
300
125
55~125
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
JEITA
SC-43
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1D
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
Yfs
Ciss
Crss
NF (1)
NF (2)
VDS = 10 V, ID = 0.1 μA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VGD = −10 V, ID = 0, f = 1 MHz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 10 Hz
VDS = 10 V, RG = 1 kΩ
ID = 0.5 mA, f = 1 kHz
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
⎯ ⎯ −1.0 nA
50
V
1.2 14 mA
0.2 ⎯ −1.5 V
4.0 15 mS
13 pF
3 pF
5 10
dB
1
2
1 2007-11-01
Free Datasheet http://www.datasheet4u.com/
Toshiba Semiconductor
Toshiba Semiconductor



   PDF Click to Download PDF File

   PDF View for Mobile





Related Start with K11*

[ K1100BA MTRONPTI ]     [ K1100E70 Teccor ]     [ K1100F Champion ]     [ K1100G Teccor ]     [ K1100S Teccor ]     [ K1101 Fuji Electric ]     [ K1102-01MR ETC ]     [ K11041 Champion ]     [ K11044 TOKO Inc ]     [ K11044-44C TOKO Inc ]     [ K11044TL TOKO Inc ]     [ K1109 UTC ]     [ K1110BA MTRONPTI ]     [ K1110D Champion ]     [ K1113 Toshiba ]     [ K1115 ETC ]     [ K1117 ETC ]     [ K1118 Toshiba ]     [ K1119 Toshiba Semiconductor ]     [ K1120 Toshiba Semiconductor ]     [ K10 Tyco Electronics ]     [ K1000MA600 IXYS ]     [ K1000MA650 IXYS ]     [ K1000ME600 IXYS ]     [ K1000ME650 IXYS ]     [ K1006-01MR Fuji Electric ]     [ K1007 Fuji Electric ]     [ K100F VMI ]     [ K100F New Jersey Semiconductor ]     [ K100UF VMI ]    


Searches related to K117 part

Find Chips CBC RS online RUTRONIK 24
Component Distributors NexGen Digital Richardson RFPD ICC
Beyond Components NAC PEI-Genesis Powell Electronics
TME Ameya 360 Power & Signal Datasheets360
Freelance Electronics Sager Electronics Terminals & Connectors TTI

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z
@ 2014 :: DatasheetsPDF.com :: Semiconductors Datasheet Search & Download Site