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K10N60 Datasheet

Fast IGBT

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K10N60 pdf
SKP10N60A
SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation
combined with low conduction losses
C
Short circuit withstand time – 10 s
Designed for:
- Motor controls
- Inverter
G
E
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
PG-TO-247-3
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKP10N60A
SKW10N60A
VCE IC VCE(sat) Tj Marking Package
600V 10A
2.3V
150C K10N60 PG-TO-220-3-1
600V 10A
2.3V
150C K10N60 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150C
Power dissipation
TC = 25C
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Value
600
20
10.6
40
40
21
10
42
20
10
92
-55...+150
260
Unit
V
A
V
s
W
C
°C
Rev. 2.4 12.06.2013
Infineon
Infineon



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