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J511 Datasheet

2SJ511

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2SJ511
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ511
Chopper Regulator, DCDC Converter and Motor Drive
Applications
l 4 V gate drive
l Low drainsource ON resistance
: RDS (ON) = 0.32 (typ.)
l High forward transfer admittance
: |Yfs| = 1.4 S (typ.)
l Low leakage current : IDSS = −100 µA (max) (VDS = 30 V)
l Enhancementmode : Vth = 0.8~2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Thermal Characteristics
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
30
30
±20
2
6
0.5
1.5
55
2
0.05
150
55~150
Unit
V
V
V
A
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
25K1B
Weight: 0.05 g (typ.)
Marking
Characteristics
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (cha)
250 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 25 V, Tch = 25°C (initial), L = 10 mH, RG = 25 , IAR = 2 A
Note 4: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
ZF
(The two digits represent
the part number.)
1 2002-08-09
Toshiba
Toshiba



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