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J344 Datasheet

2SJ344

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ344
High Speed Switching Applications
Analog Switch Applications
Low threshold voltage: Vth = 0.8 to 2.5 V
High speed
Enhancement-mode
Small package
Complementary to 2SK1827
Marking
Equivalent Circuit
2SJ344
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
PD
Tch
Tstg
Rating
50
7
50
100
150
55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
IGSS
V (BR) DSS
IDSS
Vth
Yfs
RDS (ON)
Ciss
Crss
Coss
ton
toff
Test Condition
VGS = −7 V, VDS = 0
ID = −100 μA, VGS = 0
VDS = −50 V, VGS = 0
VDS = −5 V, ID = −0.1 mA
VDS = −5 V, ID = −10 mA
ID = −10 mA, VGS = −4 V
VDS = −5 V, VGS = 0, f = 1 MHz
VDS = −5 V, VGS = 0, f = 1 MHz
VDS = −5 V, VGS = 0, f = 1 MHz
VDD = −5 V, ID = −10 mA,
VGS = 0~4 V
1
Min Typ. Max Unit
⎯ ⎯ −1 μA
50
V
⎯ ⎯ −1 μA
0.8 ⎯ −2.5 V
15 ⎯ ⎯ mS
20 50 Ω
10.5
pF
1.9 pF
7.2 pF
0.15
0.13
μs
2007-11-01
Toshiba
Toshiba



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