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J308 Datasheet

(J308 / J309) JFET VHF/UHF AMPLIFIERS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by J308/D
JFET VHF/UHF Amplifiers
N–Channel — Depletion
3
GATE
1 DRAIN
J308
J309
J310
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDS
VGS
IGF
PD
25 Vdc
25 Vdc
10 mAdc
350 mW
2.8 mW/°C
Junction Temperature Range
TJ – 65 to +125
Storage Temperature Range
Tstg – 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C
°C
Symbol
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
V(BR)GSS
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0, TA = 25°C)
(VGS = –15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
IGSS
VGS(off)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
IDSS
Gate–Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
VGS(f)
SMALL– SIGNAL CHARACTERISTICS
Common–Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J308
J309
J310
Re(yis)
Common–Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Re(yos)
Common–Gate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
v v1. Pulse Test: Pulse Width 300 µs, Duty Cycle 3.0%.
Gpg
Min
– 25
– 1.0
– 1.0
– 2.0
12
12
24
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— –1.0 nAdc
— –1.0 µAdc
Vdc
— – 6.5
— – 4.0
— – 6.5
mAdc
— 60
— 30
— 60
— 1.0 Vdc
mmhos
0.7 —
0.7 —
0.5 —
0.25 — mmhos
16 — dB
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
Motorola
Motorola



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