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J308 Datasheet

JFET VHF/UHF Amplifiers

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J308
JFET VHF/UHF Amplifiers
NChannel — Depletion
MAXIMUM RATINGS
Rating
Drain Source Voltage
GateSource Voltage
Forward Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
IGF
PD
TJ
Tstg
Value
25
25
10
350
2.8
65 to +125
65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
http://onsemi.com
1
23
CASE 2911, STYLE 5
TO92 (TO226AA)
1 DRAIN
3
GATE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate Source Breakdown Voltage
(IG = 1.0 μAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J308
J309
J310
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J308
J309
J310
GateSource Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
Min
25
1.0
1.0
2.0
12
12
24
2 SOURCE
Typ Max
Unit
— — Vdc
1.0 nAdc
1.0 μAdc
Vdc
6.5
4.0
6.5
mAdc
— 60
— 30
— 60
— 1.0 Vdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
J308/D
ON Semiconductor
ON Semiconductor



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