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J304 Datasheet

N-Channel RF Amplifier

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J304
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as
low ON resistance analog switching.
• Sourced from process 50.
1 TO-92
1. Drain 2. Source 3. Gate
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
30
-30
10
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage
IGSS
Gate Reverse Current
VGS(off) Gate-Source Cutoff Voltage
On Characteristics
IG = -1.0µA, VDS = 0
VGS = -20V, VDS = 0
VDS = 15V, ID = 1.0nA
-30
-2.0
-100
-6.0
V
pA
V
IDSS
gfs
goss
Zero-Gate Voltage Drain Current
Forward Transconductance
Output Conductance
VDS = 15V, VGS = 0
VGS = 0V, VDS = 15V, f = 1KHz
VGS= 0V, VDS = 15V, f = 1KHz
5.0
4500
15
7500
50
mA
µS
µS
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06”
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
Fairchild Semiconductor
Fairchild Semiconductor



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