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J304 Datasheet

JFET High Frequency Amplifier

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET High Frequency Amplifier
N–Channel — Depletion
1 DRAIN
3
GATE
2 SOURCE
J304
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGS
IG
PD
– 30
– 30
10
350
2.8
Lead Temperature
(1/16from Case for 10 Seconds)
TL 300
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
Gate – Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Unit
Vdc
Vdc
mA
mW
mW/°C
°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
yos
Re(yfs)
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min
30
– 2.0
5.0
4500
Max Unit
100
– 6.0
Vdc
pA
Vdc
mA
15
50
7500
mmhos
mmhos
REV 1
4–144
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola
Motorola



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