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J297 Datasheet

Silicon P-Channel MOS FET

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J297 pdf
2SJ297(L), 2SJ297(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
LDPAK
4
123
D
G
S
4
12
3
1. Gate
2. Drain
3. Source
4. Drain
November 1996
Hitachi
Hitachi



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