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J211 Datasheet

N-Channel RF Amplifier

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J210
J211
J212
G
SD
TO-92
MMBFJ210
MMBFJ211
MMBFJ212
G
SOT-23
Mark: 62V / 62W / 62X
S
D NOTE: Source & Drain
are interchangeable
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ ,Tstg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
25
- 25
10
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
J210-212
350
2.8
125
357
Max
*MMBFJ210-212
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
5
1997 Fairchild Semiconductor Corporation
J210/J211/J212/MMBFJ210/J211/J212, Rev A
Fairchild Semiconductor
Fairchild Semiconductor



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