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HIGH GAIN N-CHANNEL JFET

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Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES
LOW CUTOFF VOLTAGE
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS1
VGS(off) 1.5V
AV = 80 V/V
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation
350mW
Maximum Current
Forward Gate Current
50mA
Maximum Voltages
Gate to Drain Voltage
-40V
Gate to Source Voltage
-40V
J/SST201 SERIES
HIGH GAIN
N-CHANNEL JFET
J SERIES
TO-92
BOTTOM VIEW
DSG
123
SST SERIES
SOT-23
TOP VIEW
D1
S2
3G
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
BVGSS
Gate to Source
Breakdown Voltage
J/SST201, 202 -40
J/SST204 -25
VGS(off)
Gate to Source Cutoff
Voltage
J/SST201
J/SST202
J/SST204
-0.3
-0.8
-0.3
-1.5 V
-4
2
IDSS
Drain to Source
Saturation Current2
J/SST201
J/SST202
J/SST204
0.2
0.9
0.2
1
4.5 mA
3
IGSS
IG
ID(off)
gfs
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Forward
Transconductance
J/SST201, 204
J/SST202
-2
0.5
1
-100
-2
2
pA
mS
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
en Noise Voltage
4.5 pF
1.3
6 nV/Hz
CONDITIONS
IG = -1µA, VDS = 0V
VDS = 15V, ID = 10nA
VDS = 15V, VGS = 0V
VGS = -20V, VDS = 0V
VDG = 10V, ID = 0.1mA
VDS = 15V, VGS = -5V
VDS = 15V, VGS = 0V, f = 1kHz
VDS = 15V, VGS = 0V, f = 1MHz
VDS = 10V, VGS = 0V, f = 1kHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated Systems
Linear Integrated Systems



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