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J202 Datasheet

JFET Low Frequency / Low Noise

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFETs Low Frequency/
Low Noise
N–Channel — Depletion
1 DRAIN
J202
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Source Voltage
VDS
40
Drain – Gate Voltage
Gate – Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGS
IG
PD
40
40
50
310
2.82
Storage Temperature Range
Tstg – 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc)
Gate Reverse Current
(VGS = –20 Vdc)
Gate Source Cutoff Voltage
(VDS = 20 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1)
(VDS = 20 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 20 Vdc, f = 1.0 kHz)
v1. Pulse Width 2.0 ms.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
yfs
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min
– 40
– 0.8
Max
–100
– 4.0
Unit
Vdc
pA
Vdc
0.9 4.5 mAdc
1000
mmhos
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–141
Motorola
Motorola



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