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J113 Datasheet

JFET Chopper Transistors

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ON Semiconductort
JFET Chopper Transistors
N–Channel — Depletion
3
GATE
1 DRAIN
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Gate–Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Lead Temperature
Operating and Storage Junction
Temperature Range
Symbol
VDG
VGS
IG
PD
TL
TJ, Tstg
2 SOURCE
Value
Unit
–35 Vdc
–35 Vdc
50 mAdc
350 mW
2.8 mW/°C
300
–65 to +150
°C
°C
J111
J112
J113
1
2
3
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0 µAdc)
Gate Reverse Current
(VGS = –15 Vdc)
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 µAdc)
J111
J112
J113
Drain–Cutoff Current
(VDS = 5.0 Vdc, VGS = –10 Vdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc)
J111
J112
J113
Static Drain–Source On Resistance
(VDS = 0.1 Vdc)
J111
J112
J113
Drain Gate and Source Gate On–Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
Source Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
1. Pulse Width = 300 µs, Duty Cycle = 3.0%.
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
rDS(on)
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
© Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 1
1
Min
35
ā3.0
ā1.0
ā0.5
Max
ā1.0
ā10
ā5.0
ā3.0
1.0
Unit
Vdc
nAdc
Vdc
nAdc
mAdc
20 —
5.0 —
2.0 —
— 30
— 50
— 100
— 28
pF
— 5.0
— 5.0
pF
pF
Publication Order Number:
J111/D
ON Semiconductor
ON Semiconductor



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