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J112 Datasheet

(J111 / J112) JFET Chopper Transistors N-Channel

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J111, J112
JFET Chopper Transistors
N−Channel — Depletion
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain −Gate Voltage
Gate −Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above = 25°C
VDG
VGS
IG
PD
−35 Vdc
−35 Vdc
50 mAdc
350 mW
2.8 mW/°C
Lead Temperature
Operating and Storage Junction
Temperature Range
TL 300
TJ, Tstg −65 to +150
°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
1 DRAIN
3
GATE
2 SOURCE
TO−92
CASE 29−11
1
2
STYLE 5
3
MARKING DIAGRAM
J11x
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
J11x = Device Code
x = 1 or 2
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
J111/D
ON Semiconductor
ON Semiconductor



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