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JFET Chopper Transistor (N-Channel- Depletion)

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET Chopper Transistor
N–Channel — Depletion
3
GATE
1 DRAIN
2 SOURCE
Order this document
by J112/D
J112
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate – Source Voltage
Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGS
IG
PD
– 35
– 35
50
350
2.8
Lead Temperature
Operating and Storage Junction
Temperature Range
TL
TJ, Tstg
300
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage
(IG = –1.0 µAdc)
Gate Reverse Current
(VGS = –15 Vdc)
Gate Source Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0 µAdc)
Drain–Cutoff Current
(VDS = 5.0 Vdc, VGS = –10 Vdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc)
Static Drain–Source On Resistance
(VDS = 0.1 Vdc)
Drain Gate and Source Gate On–Capacitance
(VDS = VGS = 0, f = 1.0 MHz)
Drain Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
Source Gate Off–Capacitance
(VGS = –10 Vdc, f = 1.0 MHz)
1. Pulse Width = 300 µs, Duty Cycle = 3.0%.
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
rDS(on)
Cdg(on)
+
Csg(on)
Cdg(off)
Csg(off)
1
23
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min
35
– 1.0
Max
– 1.0
– 5.0
1.0
Unit
Vdc
nAdc
Vdc
nAdc
5.0 — mAdc
— 50
— 28
pF
— 5.0
— 5.0
pF
pF
(Replaces J111/D)
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
Motorola  Inc
Motorola Inc



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