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LOW NOISE SINGLE N-CHANNEL JFET SWITCH

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Linear Integrated Systems
J/SST108 SERIES
LOW NOISE SINGLE
N-CHANNEL JFET SWITCH
FEATURES
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A
LOW ON RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS1
rDS(on) 8
tON 4ns
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain or Source
-25V
J SERIES
TO-92
BOTTOM VIEW
DSG
123
SST SERIES
SOT-23
TOP VIEW
D1
S2
3G
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
TYP J/SST108 J/SST109 J/SST110 UNIT
MIN MAX MIN MAX MIN MAX
BVGSS Gate to Source Breakdown Voltage
-25
-25
-25
VGS(off) Gate to Source Cutoff Voltage
-3 -10 -2 -6 -0.5 -4 V
VGS(F) Gate to Source Forward Voltage
0.7
IDSS Drain to Source Saturation Current2
80
40
10
mA
IGSS Gate Leakage Current
-0.01
-3
-3
-3
IG Gate Operating Current
-0.01
nA
ID(off) Drain Cutoff Current
0.02 3 3 3
rDS(on)
Drain to Source
On Resistance
108, 109, 110
110A
8 12 18
25
CONDITIONS
IG = -1µA, VDS = 0V
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = -15V, VDS = 0V
VDG = 10V, ID = 10mA
VDS = 5V, VGS = -10V
VGS = 0V, VDS 0.1V
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM. CHARACTERISTIC
TYP J/SST108 J/SST109 J/SST110 UNIT
MIN MAX MIN MAX MIN MAX
gfs Forward Transconductance
gos Output Conductance
17
0.6
mS
rds(on) Drain to Source On Resistance
8 12 18
SST 60
Ciss Input Capacitance J 60 85 85 85
pF
Crss
Reverse Transfer
Capacitance
SST 11
J 11
15
15
15
en Equivalent Input Noise Voltage
3.5
nV/Hz
CONDITIONS
VDS = 5V, ID = 10mA
f = 1kHz
VGS = 0V, ID = 0A
f = 1kHz
VDS = 0V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = -10V
f = 1MHz
VDS = 5V, ID = 10mA
f = 1kHz
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Linear Integrated Systems
Linear Integrated Systems



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