July 1999 File Number 3987.4
5.6A, 100V, 0.600 Ohm, P-Channel Power
These advanced power MOSFETs are designed, tested, and
guaranteed to withstand a speciﬁc level of energy in the
avalanche breakdown mode of operation. They are
P-Channel enhancement mode silicon gate power ﬁeld
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate-drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17501.
NOTE: When ordering use the entire part number. Add the sufﬁx 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR91209A.
• 5.6A, 100V
• rDS(ON) = 0.600Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
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