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HY3610P Datasheet

N-Channel Enhancement Mode MOSFET

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HY3610P pdf
HY3610P
N-Channel Enhancement Mode MOSFET
Features
Pin Description
100V/160A
RDS(ON) = 4.5 m(typ.) @ VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
G
D
S
D
Applications
Switching application
Power Management for Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
P
HY3610
YYÿ XXXJWW G
Package Code
P : TO220-3L
Date Code
YYXXX WW
Assembly Material
G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi-semi.com
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