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G15N60 Datasheet

Fast IGBT

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G15N60 pdf
SGP15N60
SGW15N60
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
www.DataSheet4U.com- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-21
Type
SGP15N60
SGW15N60
VCE IC VCE(sat) Tj Marking Package
600V 15A
2.3V
150°C G15N60 PG-TO-220-3-1
600V 15A
2.3V
150°C G15N60 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 ,
start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Ts
Value
600
31
15
62
62
±20
85
Unit
V
A
V
mJ
10
139
-55...+150
260
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.1 June 06
Infineon
Infineon



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