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G152B Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
G152B
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
0.3
-0.7A
Description
The G152B provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
Low On-State Resistance:0.3 (max)
Ultra High Speed Switching
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery System
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-20
12
-0.7
-2.8
0.5
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
W
W/
Unit
/W
1/4
GTM
GTM



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