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G1270 Datasheet

NPN EPITAXIAL PLANAR TRANSISTOR

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ISSUED DATE :2005/08/01
REVISED DATE :
G1270
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The G1270 is designed for general purpose switching and amplifier applications.
Features
Excellent hFE(2)=25(Min.) @ VCE=-6V, IC=-400mA
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
-35
-30
-5
-500
625
150
-55 ~ +150
Unit
V
V
V
mA
mW
Electrical Characteristics (TA = 25
Symbol
Min.
Typ.
BVCBO
-35 -
BVCEO
-30 -
BVEBO
-5 -
ICBO
--
IEBO
--
*VCE(sat)
--
*VBE(on)
--
*hFE1
70 -
*hFE2
25 -
fT 100 -
Cob - -
Classification Of hFE
Rank
hFE1 Range
hFE2 Range
O
70 - 140
Min. 25
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=-100uA, IE=0
- V IC=-1mA, IB=0
-
-100
-100
V IE=-100uA, IC=0
nA VCB=-35V, IE=0
nA VEB=-5V, IC=0
-0.25
V IC=-100mA, IB=-10mA
-1.0 V VCE=-1V, IC=-100mA
240 VCE=-1V, IC=-100mA
- VCE=-6V, IC=-400mA
- MHz VCE=-1V, IC=-10mA, f=100MHz
8 pF VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380 s, Duty Cycle
Y
120 - 240
Min. 40
2%
1/2
GTM
GTM



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