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G111K Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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ISSUED DATE :2005/04/27
REVISED DATE :2005/07/14B
G111K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
55V
2
640mA
Description
The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The G111K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
55
20
640
500
950
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
mA
mA
mA
W
W/
Unit
/W
1/4
GTM
GTM



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