NPN Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
PD Total Device Dissipation
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
FPN560 / FPN560A
1999 Fairchild Semiconductor Corporation