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FDS6994S Datasheet
MOSFET
Fairchild Semiconductor
Fairchild Semiconductor


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FDS6994S pdf
Typical Characteristics (continued) This section copied from FDS6984S datasheet
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6994S.
10nS/DIV
Figure 22. FDS6994S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
125oC
0.001
0.0001
25oC
0.00001
0
10 20
VDS, REVERSE VOLTAGE (V)
30
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0V
10nS/DIV
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
FDS6994S Rev C2(W)

FDS6994S Datasheet PDF



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