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FDS6994S Datasheet

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FDS6994S pdf
Typical Characteristics Q1
5
ID = 6.9A
4
3
VDS = 10V
15V
20V
2
1
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
1
VGS = 10V
0.1
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 19. Maximum Safe Operating Area.
1200
1000
800
600
f = 1 MHz
VGS = 0 V
Ciss
400
200
Crss
0
0
Coss
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 18. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.1 1 10
t1, TIME (sec)
100 1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6994S Rev C2(W)
Fairchild Semiconductor
Fairchild Semiconductor



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